PHPT60603NYX
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- Mfr.Part #
- PHPT60603NYX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A LFPAK56 PWRSO8
- Stock
- 59
- In Stock ：
- 59
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 175°C TJ
- Frequency - Transition :
- 140MHz
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 5
- Package / Case :
- SC-100, SOT-669
- Configuration :
- Single
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Base Part Number :
- PHPT60603N
- Collector Emitter Saturation Voltage :
- 120mV
- Transition Frequency :
- 140MHz
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Power - Max :
- 1.25W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 25W
- Vce Saturation (Max) @ Ib, Ic :
- 270mV @ 300mA, 3A
- Number of Elements :
- 1
- Reference Standard :
- AEC-Q101; IEC-60134
- Continuous Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-G4
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PHPT60603NYX
PHPT60603NYX Documents
NPN 175°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN SC-100, SOT-669 Tape & Reel (TR) Surface Mount
PHPT60603NYX Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 120mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 270mV @ 300mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PHPT60603NYX Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 270mV @ 300mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz
PHPT60603NYX Applications
There are a lot of Nexperia USA Inc.
PHPT60603NYX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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