PHP79NQ08LT,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

120 mJ

Max Dual Supply Voltage :

75V

Element Configuration :

Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation :

157W

Packaging :

Tube

Factory Lead Time :

12 Weeks

Vgs (Max) :

±15V

Turn-Off Delay Time :

101 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.018Ohm

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

57 ns

Gate to Source Voltage (Vgs) :

15V

Power Dissipation-Max :

157W Tc

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Input Capacitance (Ciss) (Max) @ Vds :

3026pF @ 25V

Pin Count :

3

Continuous Drain Current (ID) :

73A

HTS Code :

8541.29.00.75

Package / Case :

TO-220-3

Turn On Delay Time :

30 ns

Number of Terminations :

3

Surface Mount :

No

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Pulsed Drain Current-Max (IDM) :

240A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

102ns

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 5V

FET Type :

N-Channel

Number of Elements :

1

Series :

TrenchMOS™

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA