PHP75NQ08T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

157W Tc

Published :

2009

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.013Ohm

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain to Source Voltage (Vdss) :

75V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

120 mJ

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

240A

FET Type :

N-Channel

Terminal Position :

Single

Pin Count :

3

JESD-609 Code :

e3

Terminal Finish :

Tin

Package / Case :

TO-220-3

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

75A

Surface Mount :

No

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1985pF @ 25V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 1mA