PHP191NQ06LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Turn-Off Delay Time :

273 ns

Height :

9.4mm

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

Packaging :

Tube

Rise Time :

232ns

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

55V

Length :

10.3mm

JESD-609 Code :

e3

FET Type :

N-Channel

Surface Mount :

No

Pin Count :

3

Turn On Delay Time :

63 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

240A

Package / Case :

TO-220-3

Power Dissipation :

300W

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

7665pF @ 25V

Power Dissipation-Max :

300W Tc

Width :

4.7mm

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate to Source Voltage (Vgs) :

15V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

95.6nC @ 5V

Number of Elements :

1

Number of Pins :

3

Drain to Source Breakdown Voltage :

55V

Mounting Type :

Through Hole

Vgs (Max) :

±15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Number of Terminations :

3

Continuous Drain Current (ID) :

75A

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Fall Time (Typ) :

178 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

560 mJ

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0044Ohm

Weight :

6.000006g