PHP18NQ11T,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Surface Mount :

No

Drain-source On Resistance-Max :

0.09Ohm

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

72A

Turn On Delay Time :

6 ns

ECCN Code :

EAR99

Turn-Off Delay Time :

18 ns

Number of Elements :

1

Avalanche Energy Rating (Eas) :

70 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

36ns

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Fall Time (Typ) :

12 ns

Package / Case :

TO-220-3

Element Configuration :

Single

Power Dissipation :

79W

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

110V

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 25V

HTS Code :

8541.29.00.75

Vgs (Max) :

±20V

Series :

TrenchMOS™

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

18A

Max Dual Supply Voltage :

110V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Published :

2010

Power Dissipation-Max :

79W Tc

Pin Count :

3