PHP18NQ10T,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Drain-source On Resistance-Max :

0.09Ohm

DS Breakdown Voltage-Min :

100V

Case Connection :

DRAIN

Pin Count :

3

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

70 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

FET Type :

N-Channel

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Published :

1999

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

18A

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

72A

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 25V

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

HTS Code :

8541.29.00.75

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Mounting Type :

Through Hole

Power Dissipation-Max :

79W Tc

ECCN Code :

EAR99

Number of Terminations :

3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V