PHD66NQ03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

90 mJ

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

66A

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

228A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

93W Tc

JESD-30 Code :

R-PSSO-G2

Published :

2004

Vgs(th) (Max) @ Id :

2V @ 1mA

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

Case Connection :

DRAIN

Series :

TrenchMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

2

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Terminal Finish :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.0136Ohm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)