PHD63NQ03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

68.9A Tc

Drain to Source Voltage (Vdss) :

30V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0177ohm

Terminal Form :

Gull wing

Number of Elements :

1

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Vgs (Max) :

±20V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

68.9A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Surface Mount

Published :

2000

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

111W Tc