PHD36N03LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Power Dissipation-Max :

57.6W Tc

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

173.6A

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

43.4A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Published :

2006

Transistor Application :

SWITCHING

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

17m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Drain-source On Resistance-Max :

0.04Ohm

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

43.4A