PHD3055E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

41A

JEDEC-95 Code :

TO-252AA

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

25 mJ

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin

Published :

2001

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Terminations :

2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Drain-source On Resistance-Max :

0.15Ohm

Series :

TrenchMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

33W Tc

ECCN Code :

EAR99

Case Connection :

DRAIN

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Drain Current-Max (Abs) (ID) :

10.3A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.5A, 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing