PHD21N06LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Source Url Status Check Date :

2013-06-14 00:00:00

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Series :

TrenchMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Terminal Finish :

Tin

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

76A

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-609 Code :

e3

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

34 mJ

Pin Count :

3

ECCN Code :

EAR99

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

2V @ 1mA

Qualification Status :

Not Qualified

Published :

1999

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

19A

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Transistor Application :

SWITCHING

Power Dissipation-Max :

56W Tc

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.075Ohm

Vgs (Max) :

±15V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON