PHD20N06T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

55V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Power Dissipation-Max :

51W Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

26 Weeks

Pulsed Drain Current-Max (IDM) :

73A

Pin Count :

3

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

55V

Drain-source On Resistance-Max :

0.077Ohm

Operating Temperature :

-55°C~175°C TJ

Published :

2009

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

422pF @ 25V

Rds On (Max) @ Id, Vgs :

77m Ω @ 10A, 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

36 mJ

Mounting Type :

Surface Mount

Series :

TrenchMOS™

HTS Code :

8541.29.00.75

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

18A

Transistor Element Material :

SILICON