PHD20N06T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

422pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

18A

Pulsed Drain Current-Max (IDM) :

73A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.077Ohm

Rds On (Max) @ Id, Vgs :

77m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Number of Terminations :

2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

18A Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Power Dissipation-Max :

51W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

HTS Code :

8541.29.00.75

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchMOS™

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

36 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Position :

Single

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1