PHB66NQ03LT,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Rise Time :

90ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

JESD-609 Code :

e3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

HTS Code :

8541.29.00.75

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

93W Tc

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Continuous Drain Current (ID) :

66A

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

15 ns

Series :

TrenchMOS™

Terminal Form :

Gull wing

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

228A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

25 ns

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

Lead Free :

Lead Free

Pin Count :

3

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Max Dual Supply Voltage :

25V

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Power Dissipation :

93W

Vgs(th) (Max) @ Id :

2V @ 1mA

Avalanche Energy Rating (Eas) :

90 mJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

25 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Element Configuration :

Single