PHB66NQ03LT118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Peak Reflow Temperature (Cel) :

245

Radiation Hardening :

No

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Max Dual Supply Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

90ns

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Pulsed Drain Current-Max (IDM) :

228A

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

JESD-609 Code :

e3

Turn-Off Delay Time :

25 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 1mA

Power Dissipation-Max :

93W Tc

Avalanche Energy Rating (Eas) :

90 mJ

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

93W

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

66A

Terminal Form :

Gull wing

Element Configuration :

Single

HTS Code :

8541.29.00.75

Lead Free :

Lead Free

FET Type :

N-Channel

Published :

2004

Pin Count :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V