PHB45NQ10T,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Power Dissipation-Max :

150W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.025Ohm

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Series :

TrenchMOS™

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Terminal Form :

THROUGH-HOLE

Published :

2010

FET Type :

N-Channel

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

260 mJ

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

188A

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Surface Mount :

No

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Pin Count :

3

Rds On (Max) @ Id, Vgs :

25m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

47A

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V