PHB45NQ15T,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

230W Tc

Series :

TrenchMOS™

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

45.1A Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

42 ns

Case Connection :

DRAIN

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Terminations :

2

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

31 ns

Avalanche Energy Rating (Eas) :

180 mJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Drain to Source Breakdown Voltage :

150V

Rise Time :

22ns

Vgs (Max) :

±20V

Lead Free :

Lead Free

Max Dual Supply Voltage :

150V

Published :

2004

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

90.2A

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Continuous Drain Current (ID) :

45.1A

JESD-609 Code :

e3

Turn On Delay Time :

11.5 ns

Transistor Application :

SWITCHING

Power Dissipation :

230W

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

42m Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.042Ohm