PHB38N02LT,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 5V

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 5V

Drain-source On Resistance-Max :

0.016Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

179A

Power Dissipation-Max :

57.6W Tc

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

44.7A Tc

Drain Current-Max (Abs) (ID) :

44.7A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

FET Type :

N-Channel

Number of Elements :

1

Terminal Form :

Gull wing

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

15.1nC @ 5V

Vgs (Max) :

12V

Case Connection :

DRAIN

Published :

2000

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchMOS™

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Finish :

Tin