PHB32N06LT,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Vgs (Max) :

±15V

JESD-609 Code :

e3

Current :

29A

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

Continuous Drain Current (ID) :

34A

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

60V

Fall Time (Typ) :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Packaging :

Tape and Reel (TR)

Published :

2009

Rise Time :

120ns

Transistor Application :

SWITCHING

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

45 ns

Power Dissipation :

97W

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 1mA

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

37m Ω @ 20A, 10V

Mounting Type :

Surface Mount

Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 5V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

15V

Turn On Delay Time :

14 ns

Power Dissipation-Max :

97W Tc

Pin Count :

3

Series :

TrenchMOS™