PHB18NQ10T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

18A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

633pF @ 25V

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.09Ohm

Radiation Hardening :

No

Power Dissipation-Max :

79W Tc

Rise Time :

36ns

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Pins :

3

Number of Elements :

1

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

70 mJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Case Connection :

DRAIN

Turn-Off Delay Time :

18 ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Published :

1999

HTS Code :

8541.29.00.75

Terminal Form :

Gull wing

Max Dual Supply Voltage :

100V

Power Dissipation :

79W