PHB101NQ04T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Vgs (Max) :

±20V

Pin Count :

3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

40V

JESD-609 Code :

e3

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

200 mJ

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Single

Power Dissipation-Max :

157W Tc

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

240A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.008Ohm

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Terminal Finish :

Tin

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Published :

2009

Vgs(th) (Max) @ Id :

4V @ 1mA

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

36.6nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V