PHB143NQ04T,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

200W Tc

DS Breakdown Voltage-Min :

40V

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Terminal Form :

Gull wing

Published :

1997

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Drain-source On Resistance-Max :

0.0052Ohm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

475 mJ

Mounting Type :

Surface Mount

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

75A

Pulsed Drain Current-Max (IDM) :

240A

Packaging :

Tape and Reel (TR)