PH8230E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Turn-Off Delay Time :

33 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

JESD-30 Code :

R-PSSO-G4

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

67A

Height :

1.1mm

Package / Case :

SC-100, SOT-669

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Radiation Hardening :

No

Turn On Delay Time :

28 ns

Pulsed Drain Current-Max (IDM) :

268A

Series :

TrenchMOS™

Lead Free :

Lead Free

Transistor Application :

SWITCHING

FET Type :

N-Channel

Case Connection :

DRAIN

Power Dissipation :

62.5W

Number of Elements :

1

Number of Terminations :

4

Rise Time :

44ns

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Min Operating Temperature :

-55°C

Fall Time (Typ) :

21 ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Drain-source On Resistance-Max :

0.0132ohm

Reference Standard :

IEC-60134

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5mm

Number of Pins :

5

Max Operating Temperature :

150°C

Mount :

Surface Mount

Width :

4.1mm

Max Power Dissipation :

62.5W