PH8230E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

67A

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Length :

5mm

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 10A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn-Off Delay Time :

33 ns

Turn On Delay Time :

28 ns

Height :

1.1mm

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

21 ns

Power Dissipation :

62.5W

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

IEC-60134

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Pin Count :

4

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mount :

Surface Mount

Width :

4.1mm

Published :

1997

Lead Free :

Lead Free

Element Configuration :

Single

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0132ohm

Rise Time :

44ns

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

268A

Min Operating Temperature :

-55°C

Series :

TrenchMOS™

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Packaging :

Cut Tape (CT)

Number of Elements :

1

Number of Pins :

5

JESD-30 Code :

R-PSSO-G4

FET Type :

N-Channel

Max Operating Temperature :

150°C

Package / Case :

SC-100, SOT-669

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

JESD-609 Code :

e3

Max Power Dissipation :

62.5W