PH8230E,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Turn On Delay Time :

28 ns

Pulsed Drain Current-Max (IDM) :

268A

Max Power Dissipation :

62.5W

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

30V

Height :

1.1mm

Series :

TrenchMOS™

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 10A, 10V

Max Operating Temperature :

150°C

Reference Standard :

IEC-60134

Case Connection :

DRAIN

Published :

1997

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0132ohm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Turn-Off Delay Time :

33 ns

JESD-30 Code :

R-PSSO-G4

Terminal Finish :

Tin (Sn)

Length :

5mm

Lead Free :

Lead Free

Number of Elements :

1

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

SC-100, SOT-669

Fall Time (Typ) :

21 ns

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

67A

Rise Time :

44ns

Width :

4.1mm

Number of Terminations :

4

Packaging :

Cut Tape (CT)

Number of Pins :

5

JESD-609 Code :

e3

Power Dissipation :

62.5W