PH8230E,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Fall Time (Typ) :

21 ns

Height :

1.1mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

62.5W

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Turn-Off Delay Time :

33 ns

JESD-30 Code :

R-PSSO-G4

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-55°C

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Published :

1997

Pin Count :

4

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Mount :

Surface Mount

Continuous Drain Current (ID) :

67A

Case Connection :

DRAIN

FET Type :

N-Channel

Max Power Dissipation :

62.5W

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Package / Case :

SC-100, SOT-669

Length :

5mm

Width :

4.1mm

ECCN Code :

EAR99

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.0132ohm

Reference Standard :

IEC-60134

Rise Time :

44ns

Turn On Delay Time :

28 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 10A, 10V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

268A

Number of Pins :

5