PH3855L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Power Dissipation-Max :

50W Tc

DS Breakdown Voltage-Min :

55V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

36m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

45A

Drain-source On Resistance-Max :

0.0045ohm

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Position :

Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

765pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

11.7nC @ 5V

Drain Current-Max (Abs) (ID) :

24A

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

JEDEC-95 Code :

MO-235

Avalanche Energy Rating (Eas) :

40 mJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs (Max) :

±15V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Number of Terminations :

4

Series :

TrenchMOS™

Package / Case :

SC-100, SOT-669