PH3830L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Series :

TrenchMOS™

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

62.5W Tc

Drain-source On Resistance-Max :

0.0049Ohm

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G4

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

98A

Published :

2009

JEDEC-95 Code :

MO-235

Pulsed Drain Current-Max (IDM) :

290A

Number of Terminations :

4

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 25A, 10V

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3190pF @ 10V

Package / Case :

SC-100, SOT-669

DS Breakdown Voltage-Min :

30V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

98A Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pin Count :

235

Avalanche Energy Rating (Eas) :

250 mJ