PH2525L,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

41 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

62.5W

Drain to Source Breakdown Voltage :

25V

Input Capacitance (Ciss) (Max) @ Vds :

4470pF @ 12V

Number of Pins :

5

Rise Time :

92ns

Height :

1.1mm

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 25A, 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Package / Case :

SC-100, SOT-669

JESD-30 Code :

R-PSSO-G4

Series :

TrenchMOS™

Power Dissipation-Max :

62.5W Tc

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

34.7nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

320 mJ

Fall Time (Typ) :

37 ns

Length :

5mm

Width :

4.1mm

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Pin Count :

4

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

300A

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Published :

2006

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

4

Drain-source On Resistance-Max :

0.0039Ohm

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

53 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.15V @ 1mA