PH2520U,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Number of Terminations :

4

Packaging :

Cut Tape (CT)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

300A

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 4.5V

Continuous Drain Current (ID) :

100A

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5850pF @ 10V

Package / Case :

SC-100, SOT-669

JESD-609 Code :

e3

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

950mV @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0039Ohm

Terminal Form :

Gull wing

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Series :

TrenchMOS™

Terminal Position :

Single

Published :

2009

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Pin Count :

4

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G4

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

30