PEMF21,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Min Operating Temperature :

-65°C

Resistor - Emitter Base (R2) :

10k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 200 @ 10mA 2V

Max Frequency :

280MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Collector Emitter Voltage (VCEO) :

300mV

Mounting Type :

Surface Mount

Max Breakdown Voltage :

12V

Transition Frequency :

280MHz

RoHS Status :

RoHS Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Collector Emitter Breakdown Voltage :

12V

Base Part Number :

PEMF21

Element Configuration :

Dual

Terminal Form :

Flat

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Collector Current :

500mA

Lead Free :

Lead Free

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Collector Current :

-500mA

Radiation Hardening :

No

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-6V

Resistor - Base (R1) :

10k Ω

Max Operating Temperature :

150°C

Published :

2009

Factory Lead Time :

26 Weeks

Number of Pins :

6

hFE Min :

200

Number of Terminations :

6

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Pin Count :

6

Power Dissipation :

200mW

Current - Collector (Ic) (Max) :

100mA 500mA

Mount :

Surface Mount