PDTA114EMB,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Operating Temperature :

150°C

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

150mV

Element Configuration :

Single

Terminal Position :

BOTTOM

Polarity :

PNP

Transition Frequency :

180MHz

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

Number of Pins :

3

Package / Case :

3-XFDFN

Pin Count :

3

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Base Part Number :

PDTA114

Case Connection :

COLLECTOR

Max Power Dissipation :

250mW

Mount :

Surface Mount

Frequency - Transition :

180MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING