PBLS6022D,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Collector Current :

1.5A

Resistor - Base (R1) :

4.7k Ω

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA 1.5A

Emitter Base Voltage (VEBO) :

-5V

Published :

2009

Element Configuration :

Dual

Max Breakdown Voltage :

60V

Max Power Dissipation :

760mW

Number of Terminations :

6

Continuous Collector Current :

-1.5A

Collector Emitter Breakdown Voltage :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V / 140 @ 1A 2V

Current - Collector Cutoff (Max) :

1μA 100nA

Polarity :

NPN, PNP

Power Dissipation :

370mW

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Frequency - Transition :

150MHz

Max Operating Temperature :

150°C

hFE Min :

285

Transistor Type :

1 PNP Pre-Biased, 1 PNP

Number of Pins :

6

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Collector Emitter Voltage (VCEO) :

150mV

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Pin Count :

6

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Package / Case :

SC-74, SOT-457

Resistor - Emitter Base (R2) :

4.7k Ω