PBLS6003D,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Package / Case :

SC-74, SOT-457

Collector Emitter Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Base Part Number :

PBLS6003

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 500mA 5V

Collector Emitter Voltage (VCEO) :

150mV

Mounting Type :

Surface Mount

Number of Pins :

6

JESD-609 Code :

e3

Published :

2009

Lead Free :

Lead Free

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Current - Collector Cutoff (Max) :

1μA 100nA

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Radiation Hardening :

No

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Frequency - Transition :

185MHz

Factory Lead Time :

4 Weeks

Number of Terminations :

6

Max Power Dissipation :

600mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 340mV @ 100mA, 1A

Polarity :

NPN, PNP

ECCN Code :

EAR99

Max Collector Current :

700mA

Transition Frequency :

185MHz

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

60V

Element Configuration :

Dual

Pin Count :

6

Terminal Finish :

Tin (Sn)

Current - Collector (Ic) (Max) :

100mA 700mA

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-65°C

Number of Elements :

2