PBLS6001D,115
- Mfr.Part #
- PBLS6001D,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN PREBIAS/PNP 0.6W 6TSOP
- Stock
- 13,645
- In Stock :
- 13,645
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- ECCN Code :
- EAR99
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Resistor - Base (R1) :
- 2.2k Ω
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Base Part Number :
- PBLS6001
- Additional Feature :
- BUILT IN BIAS RESISTOR RATIO IS 1
- Voltage - Collector Emitter Breakdown (Max) :
- 50V 60V
- Transistor Type :
- 1 NPN Pre-Biased, 1 PNP
- Published :
- 2009
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-G6
- Package / Case :
- SC-74, SOT-457
- Transition Frequency :
- 185MHz
- Current - Collector (Ic) (Max) :
- 100mA 700mA
- Terminal Form :
- Gull wing
- Resistor - Emitter Base (R2) :
- 2.2k Ω
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN AND PNP
- Frequency - Transition :
- 185MHz
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500μA, 10mA / 340mV @ 100mA, 1A
- Number of Elements :
- 2
- Pin Count :
- 6
- Power - Max :
- 600mW
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 5V / 150 @ 500mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 6
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Datasheets
- PBLS6001D,115

PBLS6001D,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Nexperia USA Inc. stock available at
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