PBLS2021D,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 210mV @ 100mA, 1.8A

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

Radiation Hardening :

No

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

1μA 100nA

Factory Lead Time :

4 Weeks

Element Configuration :

Dual

Resistor - Base (R1) :

2.2k Ω

Pin Count :

6

Number of Terminations :

6

Max Power Dissipation :

760mW

Current - Collector (Ic) (Max) :

100mA 1.8A

Min Operating Temperature :

-55°C

Max Breakdown Voltage :

20V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V / 200 @ 1A 2V

Package / Case :

SC-74, SOT-457

Mounting Type :

Surface Mount

Frequency - Transition :

130MHz

Max Collector Current :

1.8A

Emitter Base Voltage (VEBO) :

-5V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

20V

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Mount :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

hFE Min :

220

Published :

2009

Number of Elements :

2

Resistor - Emitter Base (R2) :

2.2k Ω

Collector Emitter Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Power Dissipation :

370mW

Continuous Collector Current :

-1.8A