PBHV9215Z,115
- Mfr.Part #
- PBHV9215Z,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 2A SOT223
- Stock
- 2,827
- In Stock :
- 2,827
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.45W
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Published :
- 2009
- Max Collector Current :
- 2A
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 10V
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 35MHz
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 400mA, 2A
- Collector Base Voltage (VCBO) :
- 200V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Length :
- 12.7mm
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.35mm
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Operating Temperature :
- 150°C TJ
- Frequency :
- 35MHz
- Radiation Hardening :
- No
- Pin Count :
- 4
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -6V
- hFE Min :
- 60
- Transition Frequency :
- 35MHz
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 4.535924g
- Max Breakdown Voltage :
- 150V
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 1.45W
- Collector Emitter Voltage (VCEO) :
- 150V
- Base Part Number :
- PBHV9215
- Datasheets
- PBHV9215Z,115

PNP 150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBHV9215Z,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 400mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 35MHz.Single BJT transistor can take a breakdown input voltage of 150V volts.During maximum operation, collector current can be as low as 2A volts.
PBHV9215Z,115 Features
the DC current gain for this device is 80 @ 1A 10V
the vce saturation(Max) is 350mV @ 400mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 35MHz
PBHV9215Z,115 Applications
There are a lot of Nexperia USA Inc.
PBHV9215Z,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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