PBHV9115Z,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Power Dissipation :

1.4W

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G4

Base Part Number :

PBHV9115

Pin Count :

4

Number of Pins :

73

Transition Frequency :

115MHz

Max Collector Current :

1A

Operating Temperature :

150°C TJ

hFE Min :

100

Factory Lead Time :

4 Weeks

Collector Base Voltage (VCBO) :

200V

Power Dissipation :

1.4W

Frequency :

115MHz

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100mA, 500mA

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

150V

Number of Elements :

1

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

150V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Gain Bandwidth Product :

115MHz

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Position :

Dual

Number of Terminations :

4

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

150V

Package / Case :

TO-261-4, TO-261AA

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

JESD-609 Code :

e3

Published :

2009

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-6V