PBHV9050Z,115
- Mfr.Part #
- PBHV9050Z,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.25A SOT223
- Stock
- 3,503
- In Stock :
- 3,503
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 500V
- Collector Base Voltage (VCBO) :
- 500V
- Transistor Type :
- PNP
- Zener Current :
- 5mA
- Number of Pins :
- 4
- Base Part Number :
- PBHV9050
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 500V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Termination :
- Axial
- Power - Max :
- 700mW
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 550MHz
- Emitter Base Voltage (VEBO) :
- -6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 50mA 10V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 50MHz
- Max Power Dissipation :
- 700mW
- Test Current :
- 5mA
- Power Dissipation :
- 1.4W
- Mount :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 50MHz
- Max Breakdown Voltage :
- 500V
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 20mA, 100mA
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Outside Diameter :
- 2 mm
- Published :
- 2010
- Max Collector Current :
- 250mA
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Zener Voltage :
- 9.1V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Tolerance :
- 5%
- Datasheets
- PBHV9050Z,115

PNP 150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBHV9050Z,115 Overview
This device has a DC current gain of 80 @ 50mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 500V volts.The maximum collector current is 250mA volts.
PBHV9050Z,115 Features
the DC current gain for this device is 80 @ 50mA 10V
the vce saturation(Max) is 350mV @ 20mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 50MHz
PBHV9050Z,115 Applications
There are a lot of Nexperia USA Inc.
PBHV9050Z,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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