PBHV8540X,115
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- Mfr.Part #
- PBHV8540X,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.5A SOT89
- Stock
- 757
- In Stock ：
- 757
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 400V
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 60mA, 300mA
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 520mW
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 500V
- Base Part Number :
- PBHV8540
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 30MHz
- Transition Frequency :
- 30MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Power - Max :
- 520mW
- Package / Case :
- TO-243AA
- Power Dissipation :
- 1.5W
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 400V
- Datasheets
- PBHV8540X,115
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBHV8540X,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 60mA, 300mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
PBHV8540X,115 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8540X,115 Applications
There are a lot of Nexperia USA Inc.
PBHV8540X,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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