NZT902
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- Mfr.Part #
- NZT902
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 90V 3A SOT223-4
- Stock
- 3,407
- In Stock ：
- 3,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 2V
- Number of Pins :
- 4
- Element Configuration :
- Single
- Width :
- 3.5mm
- Published :
- 2004
- Collector Emitter Saturation Voltage :
- 600mV
- Max Breakdown Voltage :
- 90V
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 90V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Max Collector Current :
- 3A
- hFE Min :
- 80
- Weight :
- 188mg
- Transition Frequency :
- 75MHz
- Frequency :
- 75MHz
- Height :
- 1.6mm
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 75MHz
- Factory Lead Time :
- 24 Weeks
- Base Part Number :
- NZT902
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Length :
- 6.5mm
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 90V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 90V
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NZT902
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT902 Overview
In this device, the DC current gain is 80 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 90V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NZT902 Features
the DC current gain for this device is 80 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 75MHz
NZT902 Applications
There are a lot of ON Semiconductor
NZT902 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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