NZT751
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- Mfr.Part #
- NZT751
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A SOT223-4
- Stock
- 3,668
- In Stock ：
- 3,668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Gull wing
- Transition Frequency :
- 75MHz
- Frequency :
- 75MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- -80V
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.2W
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 75MHz
- Weight :
- 188mg
- Contact Plating :
- Tin
- Max Collector Current :
- 4A
- Factory Lead Time :
- 45 Weeks
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 75
- Height :
- 1.7mm
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Published :
- 2005
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- NZT751
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Length :
- 6.7mm
- Current Rating :
- -4A
- Number of Pins :
- 3
- Voltage - Rated DC :
- -60V
- Lead Free :
- Lead Free
- Width :
- 3.7mm
- JESD-30 Code :
- R-PDSO-G4
- Max Power Dissipation :
- 1.2W
- Pbfree Code :
- yes
- Datasheets
- NZT751
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT751 Overview
In this device, the DC current gain is 40 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NZT751 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 75MHz
NZT751 Applications
There are a lot of ON Semiconductor
NZT751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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