NZT751
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- Mfr.Part #
- NZT751
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A SOT223-4
- Stock
- 3,668
- In Stock ：
- 3,668
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 75MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -4A
- Transistor Type :
- PNP
- hFE Min :
- 75
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -80V
- Height :
- 1.7mm
- Width :
- 3.7mm
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -60V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 45 Weeks
- Max Collector Current :
- 4A
- Frequency :
- 75MHz
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Published :
- 2005
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1.2W
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 75MHz
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Base Part Number :
- NZT751
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Power Dissipation :
- 1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A 2V
- Weight :
- 188mg
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- Datasheets
- NZT751
NZT751 Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT751 Overview
In this device, the DC current gain is 40 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
NZT751 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 75MHz
NZT751 Applications
There are a lot of ON Semiconductor
NZT751 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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