NZT560A
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- Mfr.Part #
- NZT560A
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A SOT223-4
- Stock
- 16,600
- In Stock ：
- 16,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 6.5mm
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 300mA, 3A
- Transistor Element Material :
- SILICON
- Current Rating :
- 3A
- Radiation Hardening :
- No
- Transition Frequency :
- 75MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 75MHz
- Number of Pins :
- 3
- Package / Case :
- TO-261-4, TO-261AA
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PDSO-G4
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 1.6mm
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 3A
- Published :
- 2017
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 400mV
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- NZT560
- Frequency :
- 75MHz
- Polarity/Channel Type :
- NPN
- Width :
- 3.5mm
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- hFE Min :
- 250
- Factory Lead Time :
- 14 Weeks
- Lead Free :
- Lead Free
- Power Dissipation :
- 1W
- Weight :
- 188mg
- Element Configuration :
- Single
- Datasheets
- NZT560A
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT560A Overview
DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 300mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT560A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 75MHz
NZT560A Applications
There are a lot of ON Semiconductor
NZT560A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NZT560 | onsemi | 4,197 | TRANS NPN 60V 3A SOT223-4 |
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