NVTR4502PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

19 ns

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Turn On Delay Time :

5.2 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Type :

P-Channel

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

1.13A Ta

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Resistance :

200mOhm

Power Dissipation-Max :

400mW Ta

Transistor Application :

SWITCHING

Power Dissipation :

400mW

Continuous Drain Current (ID) :

1.13A

Fall Time (Typ) :

17.5 ns

ECCN Code :

EAR99

Rise Time :

12ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.95A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)