NVTR01P02LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

220m Ω @ 750mA, 4.5V

Pbfree Code :

yes

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 5V

Element Configuration :

Single

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

400mW Ta

Turn On Delay Time :

7 ns

Lead Free :

Lead Free

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Terminations :

3

Power Dissipation :

400mW

Pin Count :

3

Drain-source On Resistance-Max :

0.22Ohm

Surface Mount :

yes

Continuous Drain Current (ID) :

1.3A

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

20 ns

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Terminal Position :

Dual

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

18 ns

Rise Time :

15ns