NVMFSC0D9N04CL
- Mfr.Part #
- NVMFSC0D9N04CL
- Manufacturer
- onsemi
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 50A/316A 8DFN
- Stock
- 10,463
- In Stock :
- 10,463
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PDSO-F5
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 5
- Drain Current-Max (Abs) (ID) :
- 316A
- Factory Lead Time :
- 46 Weeks
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Drain-source On Resistance-Max :
- 0.00087Ohm
- Rds On (Max) @ Id, Vgs :
- 870μ Ω @ 50A, 10V
- DS Breakdown Voltage-Min :
- 40V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 4.1W Ta 166W Tc
- Package / Case :
- 8-PowerVDFN
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta 316A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 6100pF @ 25V
- Avalanche Energy Rating (Eas) :
- 706 mJ
- Pulsed Drain Current-Max (IDM) :
- 900A
- FET Type :
- N-Channel
- Datasheets
- NVMFSC0D9N04CL

N-Channel Tape & Reel (TR) 870μ Ω @ 50A, 10V ±20V 6100pF @ 25V 86nC @ 10V 40V 8-PowerVDFN
NVMFSC0D9N04CL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 706 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6100pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 316A.A maximum pulsed drain current of 900A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
NVMFSC0D9N04CL Features
the avalanche energy rating (Eas) is 706 mJ
based on its rated peak drain current 900A.
a 40V drain to source voltage (Vdss)
NVMFSC0D9N04CL Applications
There are a lot of ON Semiconductor
NVMFSC0D9N04CL applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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