NVMFS6H818NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2015

Factory Lead Time :

15 Weeks

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Terminations :

5

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0037Ohm

Drain to Source Voltage (Vdss) :

80V

Number of Elements :

1

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 20A, 10V

Pbfree Code :

yes

Power Dissipation-Max :

3.8W Ta 136W Tc

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Avalanche Energy Rating (Eas) :

731 mJ

Package / Case :

8-PowerTDFN, 5 Leads

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

20A Ta 123A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 40V

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

4V @ 190μA

Drain Current-Max (Abs) (ID) :

20A

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-F5

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Pulsed Drain Current-Max (IDM) :

900A

DS Breakdown Voltage-Min :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON