NVMFS6H818NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 20A, 10V

Pbfree Code :

yes

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

731 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 40V

Drain-source On Resistance-Max :

0.0037Ohm

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 136W Tc

Drain Current-Max (Abs) (ID) :

20A

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 190μA

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

80V

Transistor Element Material :

SILICON

Number of Terminations :

5

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

20A Ta 123A Tc

Published :

2015

Terminal Form :

Flat

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

DS Breakdown Voltage-Min :

80V

Pulsed Drain Current-Max (IDM) :

900A

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-PowerTDFN, 5 Leads