NVMFS6H800NWFT1G

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Mfr.Part #
NVMFS6H800NWFT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 80V 28A/203A 5DFN
Stock
769
In Stock :
769

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
28A Ta 203A Tc
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Published :
2015
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
4 Weeks
Series :
Automotive, AEC-Q101
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
2.1m Ω @ 50A, 10V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 330μA
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
5530pF @ 40V
FET Type :
N-Channel
Terminal Finish :
Tin (Sn)
Drain to Source Voltage (Vdss) :
80V
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Power Dissipation-Max :
3.8W Ta 200W Tc
Vgs (Max) :
±20V
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Package / Case :
8-PowerTDFN, 5 Leads
Datasheets
NVMFS6H800NWFT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS6H800NWFT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, 5 Leads, NVMFS6H800NWFT1G pinout, NVMFS6H800NWFT1G datasheet PDF, NVMFS6H800NWFT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS6H800NWFT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS6H800NWFT1G


N-Channel Tape & Reel (TR) 2.1m Ω @ 50A, 10V ±20V 5530pF @ 40V 85nC @ 10V 80V 8-PowerTDFN, 5 Leads

NVMFS6H800NWFT1G Description


This N-Channel Logic Level MOSFET has been designed primarily to improve the overall efficiency of DC/DC converters with either synchronous or conventional switching PWM controllers. These MOSFETs switch more quickly and have a lower gate charge than other MOSFETs with comparable Rds(on) specifications. This results in MOSFETs that are easier to drive and safer (even at very high frequencies), as well as more effective DC/DC power supply systems. It has been optimized for low gate charge, low Ros(on), and rapid switching speed.



NVMFS6H800NWFT1G Features


? Compact Design with Small Footprint (5x6 mm)


? Reduced Conduction Losses through Low RDS(on)


? Reduce Driver Losses with Low QG and Capacitance


? Wettable Flank Option for Enhanced Optical Inspection (NVMFS6H800NWF)


? PPAP Capable and AEC-Q101 Qualified


? These devices are RoHS compliant and Pb-free.



NVMFS6H800NWFT1G Applications


Switching applications


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