NVMFS6B14NLWFT3G
- Mfr.Part #
- NVMFS6B14NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 11A/55A 5DFN
- Stock
- 17,743
- In Stock :
- 17,743
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±16V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- JESD-30 Code :
- R-PDSO-F5
- DS Breakdown Voltage-Min :
- 100V
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1680pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 20A, 10V
- Terminal Form :
- Flat
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 38 Weeks
- Series :
- Automotive, AEC-Q101
- Published :
- 2015
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 3.8W Ta 94W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Dual
- Pulsed Drain Current-Max (IDM) :
- 140A
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 29 mJ
- Number of Terminations :
- 5
- Drain-source On Resistance-Max :
- 0.019Ohm
- Continuous Drain Current (ID) :
- 55A
- Lead Free :
- Lead Free
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 55A Tc
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Element Material :
- SILICON
- Datasheets
- NVMFS6B14NLWFT3G

N-Channel Tape & Reel (TR) 13m Ω @ 20A, 10V ±16V 1680pF @ 25V 8nC @ 4.5V 100V 8-PowerTDFN, 5 Leads
NVMFS6B14NLWFT3G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 29 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1680pF @ 25V.This device has a continuous drain current (ID) of [55A], which is its maximum continuous current.A maximum pulsed drain current of 140A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
NVMFS6B14NLWFT3G Features
the avalanche energy rating (Eas) is 29 mJ
a continuous drain current (ID) of 55A
based on its rated peak drain current 140A.
a 100V drain to source voltage (Vdss)
NVMFS6B14NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS6B14NLWFT3G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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