NVMFS6B14NLT1G

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Mfr.Part #
NVMFS6B14NLT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 100V 11A/55A 5DFN
Stock
29,325
In Stock :
29,325

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
55A
Drain-source On Resistance-Max :
0.019Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Case Connection :
DRAIN
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
3V @ 250µA
Rds On (Max) @ Id, Vgs :
13m Ω @ 20A, 10V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Package / Case :
8-PowerTDFN
Avalanche Energy Rating (Eas) :
29 mJ
REACH SVHC :
No SVHC
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Automotive, AEC-Q101
Published :
2015
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Terminal Form :
Flat
Pulsed Drain Current-Max (IDM) :
140A
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
11A Ta 55A Tc
Vgs (Max) :
±16V
Mounting Type :
Surface Mount
Terminal Position :
Dual
JESD-30 Code :
R-PDSO-F5
Drain to Source Voltage (Vdss) :
100V
DS Breakdown Voltage-Min :
100V
Factory Lead Time :
38 Weeks
Number of Terminations :
5
Number of Pins :
8
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Threshold Voltage :
3V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Power Dissipation-Max :
3.8W Ta 94W Tc
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 4.5V
Datasheets
NVMFS6B14NLT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS6B14NLT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Terminations:5, Number of Pins:8, Operating Temperature:-55°C~175°C TJ, NVMFS6B14NLT1G pinout, NVMFS6B14NLT1G datasheet PDF, NVMFS6B14NLT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS6B14NLT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS6B14NLT1G


N-Channel Tape & Reel (TR) 13m Ω @ 20A, 10V ±16V 1680pF @ 25V 8nC @ 4.5V 100V 8-PowerTDFN

NVMFS6B14NLT1G Description


NVMFS6B14NLT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 100V. The operating temperature of the NVMFS6B14NLT1G is -55??C~175??C TJ and its maximum power dissipation is 3.8W Ta. NVMFS6B14NLT1G has 8 pins and it is available in Tape & Reel (TR) packaging way.



NVMFS6B14NLT1G Features


  • Small Footprint (5x6 mm) for Compact Design

  • Low RDS(on) to Minimize Conduction Losses

  • Low QG and Capacitance to Minimize Driver Losses

  • NVMFS6B14NLWF ? Wettable Flank Option for Enhanced Optical Inspection

  • AEC?Q101 Qualified and PPAP Capable

  • These Devices are Pb?Free and are RoHS Compliant



NVMFS6B14NLT1G Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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