NVMFS6B14NLT1G
- Mfr.Part #
- NVMFS6B14NLT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 11A/55A 5DFN
- Stock
- 29,325
- In Stock :
- 29,325
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 55A
- Drain-source On Resistance-Max :
- 0.019Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 20A, 10V
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerTDFN
- Avalanche Energy Rating (Eas) :
- 29 mJ
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Published :
- 2015
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- Flat
- Pulsed Drain Current-Max (IDM) :
- 140A
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1680pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 55A Tc
- Vgs (Max) :
- ±16V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-F5
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100V
- Factory Lead Time :
- 38 Weeks
- Number of Terminations :
- 5
- Number of Pins :
- 8
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 3.8W Ta 94W Tc
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Datasheets
- NVMFS6B14NLT1G

N-Channel Tape & Reel (TR) 13m Ω @ 20A, 10V ±16V 1680pF @ 25V 8nC @ 4.5V 100V 8-PowerTDFN
NVMFS6B14NLT1G Description
NVMFS6B14NLT1G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 100V. The operating temperature of the NVMFS6B14NLT1G is -55??C~175??C TJ and its maximum power dissipation is 3.8W Ta. NVMFS6B14NLT1G has 8 pins and it is available in Tape & Reel (TR) packaging way.
NVMFS6B14NLT1G Features
-
Small Footprint (5x6 mm) for Compact Design
-
Low RDS(on) to Minimize Conduction Losses
-
Low QG and Capacitance to Minimize Driver Losses
-
NVMFS6B14NLWF ? Wettable Flank Option for Enhanced Optical Inspection
-
AEC?Q101 Qualified and PPAP Capable
-
These Devices are Pb?Free and are RoHS Compliant
NVMFS6B14NLT1G Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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