NVMFS6B05NLWFT3G

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Mfr.Part #
NVMFS6B05NLWFT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
NVMFS6B05 - SINGLE N-CHANNEL POW
Stock
35,818
In Stock :
35,818

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
Non-RoHS Compliant
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Terminal Form :
Flat
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
Lifecycle Status :
ACTIVE, NOT REC (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
100V
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PDSO-F5
Vgs(th) (Max) @ Id :
3V @ 250µA
FET Type :
N-Channel
Mount :
Surface Mount
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max :
3.8W Ta 165W Tc
Avalanche Energy Rating (Eas) :
125 mJ
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
6.8nC @ 10V
Terminal Position :
Dual
Reach Compliance Code :
not_compliant
Number of Terminations :
5
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
Pbfree Code :
yes
Published :
2015
Factory Lead Time :
38 Weeks
Rds On (Max) @ Id, Vgs :
5.6m Ω @ 20A, 10V
Package / Case :
8-PowerTDFN
Mounting Type :
Surface Mount
Vgs (Max) :
±16V
Case Connection :
DRAIN
Number of Pins :
8
Drain Current-Max (Abs) (ID) :
114A
Series :
Automotive, AEC-Q101
Pulsed Drain Current-Max (IDM) :
330A
Transistor Element Material :
SILICON
Datasheets
NVMFS6B05NLWFT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVMFS6B05NLWFT3G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:5, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Pins:8, NVMFS6B05NLWFT3G pinout, NVMFS6B05NLWFT3G datasheet PDF, NVMFS6B05NLWFT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVMFS6B05NLWFT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVMFS6B05NLWFT3G


N-Channel Tape & Reel (TR) 5.6m Ω @ 20A, 10V ±16V 3980pF @ 25V 6.8nC @ 10V 100V 8-PowerTDFN

NVMFS6B05NLWFT3G Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 125 mJ.A device's maximal input capacitance is 3980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 114A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 330A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NVMFS6B05NLWFT3G Features


the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 330A.
a 100V drain to source voltage (Vdss)


NVMFS6B05NLWFT3G Applications


There are a lot of ON Semiconductor
NVMFS6B05NLWFT3G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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