NVMFS6B05NLWFT3G
- Mfr.Part #
- NVMFS6B05NLWFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 17A 5DFN
- Stock
- 29,051
- In Stock :
- 29,051
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Vgs (Max) :
- ±16V
- Published :
- 2015
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 3.8W Ta 165W Tc
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- 8-PowerTDFN
- Pulsed Drain Current-Max (IDM) :
- 330A
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3980pF @ 25V
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.8nC @ 10V
- Factory Lead Time :
- 38 Weeks
- DS Breakdown Voltage-Min :
- 100V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PDSO-F5
- Drain Current-Max (Abs) (ID) :
- 114A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Datasheets
- NVMFS6B05NLWFT3G

N-Channel Tape & Reel (TR) 5.6m Ω @ 20A, 10V ±16V 3980pF @ 25V 6.8nC @ 10V 100V 8-PowerTDFN
NVMFS6B05NLWFT3G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 125 mJ.A device's maximal input capacitance is 3980pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 114A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 330A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NVMFS6B05NLWFT3G Features
the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 330A.
a 100V drain to source voltage (Vdss)
NVMFS6B05NLWFT3G Applications
There are a lot of ON Semiconductor
NVMFS6B05NLWFT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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